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| BUK7213-75B TrenchMOSTM standard level FET M3D300 Rev. 01 -- 10 December 2002 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOSTM technology, featuring very low on-state resistance. Product availability: BUK7213-75B in SOT428 (D-PAK) 1.2 Features s TrenchMOSTM technology s 175 C rated s Q101 compliant s Standard level compatible 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching 1.4 Quick reference data s EDS(AL)S 126 mJ s ID 74 A s RDSon = 11.7 m (typ) s Ptot 150 W 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] mb Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 74 A; VDS 75 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 RGS = 20 k Conditions Min -55 -55 Max 75 75 20 74 52 296 150 +175 +175 74 296 126 Unit V V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 2 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 120 Pder (%) 80 03na19 80 ID (A) 60 03nl22 40 40 20 0 0 50 100 150 200 Tmb (C) 0 0 50 100 150 Tmb (C) 200 P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 10 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 ID (A) 03nl20 limit RDSon = VDS/ID 102 tp = 10 s 100 s 10 DC 1 ms 10 ms 100 ms 1 1 10 102 VDS (V) 103 Tmb = 25 C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 3 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 4. Thermal characteristics Table 3: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Figure 4 Conditions Min Typ 71.4 0.45 Max 1.0 Unit K/W K/W 4.1 Transient thermal impedance 1 = 0.5 Zth(j-mb) (K/W) 0.2 0.1 10-1 0.05 0.02 03nl34 10-2 single shot P = tp T tp 10-3 10-6 T 10-5 10-4 10-3 10-2 10-1 tp (s) t 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 4 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 5. Characteristics Table 4: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 75 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Tj = 175 C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance measured from drain to centre of die measured from source lead to source bond pad IS = 15 A; VGS = 0 V; Figure 15 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V VDS = 25 V; RL = 1.2 ; VGS = 10 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VGS = 10V; VDS = 60 V; ID = 25 A; Figure 14 41 9 15 1959 326 159 18 114 52 45 2.5 7.5 2612 391 218 nC nC nC pF pF pF nS nS nS nS nH nH 11.7 13 27 m m 0.02 2 1 500 100 A A nA 2 1 3 4 4.4 V V V 75 70 V V Min Typ Max Unit Static characteristics Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 74 94 1.2 V ns nC 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 5 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 250 ID (A) 200 Label is VGS (V) 12 14 20 10 9.5 9 8.5 150 8 7.5 100 7 6.5 50 6 5.5 5 4.5 0 2 4 6 8 03nl17 25 RDSon (m) 20 03nl16 15 10 0 5 5 10 15 VGS (V) 20 10 VDS (V) Tj = 25 C; tp = 300 s Tj = 25 C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 30 RDSon (m) 6 6.5 7 8 10 03nl18 2.4 a 03nb25 20 20 1.6 10 0.8 Label is VGS (V) 0 0 50 100 150 200 ID (A) 250 0 -60 0 60 120 T (C) 180 j Tj = 25 C; tp = 300s R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 6 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 5 VGS(th) (V) 4 max 03aa32 10-1 ID (A) 10-2 03aa35 3 typ 10-3 min typ max 2 min 10-4 1 10-5 0 -60 0 60 120 Tj (C) 180 10-6 0 2 4 VGS (V) 6 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 50 gfs (S) 40 03nl14 3000 Ciss C (pF) 2000 03nl19 Coss 30 20 1000 10 Crss 0 0 20 40 ID (A) 60 0 10-1 1 10 VDS (V) 102 Tj = 25 C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 7 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 100 ID (A) 75 03nl15 10 VGS (V) 8 VDD = 14 V 6 03nl13 VDD = 60 V 50 4 25 Tj = 175 C Tj = 25 C 2 0 0 2 4 6 VGS (V) 8 0 0 10 20 30 40 50 QG (nC) VDS = 25 V Tj = 25 C; ID = 25 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 100 IS (A) 75 03nl12 50 25 Tj = 175 C Tj = 25 C 0 0.0 0.3 0.6 0.9 VSD (V) 1.2 VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 8 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 6. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 E1 D1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1(1) 0.65 0.45 A2 0.93 0.73 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.26 c 0.4 0.2 D 6.22 5.98 D1 min. 4.0 E 6.73 6.47 E1 e e1 HE 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.9 0.5 w 0.2 y max. 0.2 4.81 2.285 4.57 4.45 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 16. SOT428 (D-PAK) 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 9 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 7. Revision history Table 5: Rev Date 01 20021210 Revision history CPCN Description Objective data (9397 750 10799) 9397 750 10799 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 10 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET 8. Data sheet status Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 9. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 11. Trademarks TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V. 10. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 10799 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Objective data Rev. 01 -- 10 December 2002 11 of 12 Philips Semiconductors BUK7213-75B TrenchMOSTM standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 December 2002 Document order number: 9397 750 10799 |
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